This course provides a full practical approach to manufacturing operations of integrated silicon circuits in NMOS technology in clean rooms. A practical approach to the technology of MOS components and integrated circuits on self-aligned polysilicon grids using 4 masking levels. Starting with a blank silicon wafer students carry out various manufacturing operations (photolithography, chemical and dry engraving, thermal oxidation, deposits of thin layers, doping by diffusion or implantation, metalising). Stages of physical characterisation are included (layer thickness, resistivity, junction depth) and electric tests on the structures produced: elementary components (diodes, polysilicon and aluminium resistances, MOS capacities, MOS short and long channel transistors) and also integrated circuits (decoders, switches, Schmitt triggers, sequencers).
The course takes place over one week in the premises of the Micro-Nano-Electronic Inter-university workshop (CNFM platform) on the campus of INSA-Toulouse.
| On completion of the unit, the student will be capable of: | Classification level | Priority |
|---|---|---|
| Knowing manufacturing processes | 1. Knowledge | Essential |
| Knowing techniques of component characterisation | 1. Knowledge | Essential |
| Knowing techniques of functional testing | 1. Knowledge | Essential |
| Working in a restricted and secured environment | 3. Apply | Important |
| Percentage ratio of individual assessment | Percentage ratio of group assessment | ||||
|---|---|---|---|---|---|
| Written exam: | % | Project submission: | % | ||
| Individual oral exam: | % | Group presentation: | % | ||
| Individual presentation: | % | Group practical exercise: | % | ||
| Individual practical exercise: | % | Group report: | 100 | % | |
| Individual report: | % | ||||
| Other(s): % | |||||
| Type of teaching activity | Content, sequencing and organisation |
|---|---|
| Labwork | Masking oxide deposits, photoengraving 1 (canal opening) and characterisation (measuring thickness of oxide masking, R squared) RCA cleaning, grid oxide deposit, polysilicon deposit, photoengraving 2 (poly engraving), characterisation (measuring poly thickness) Doping (diffusion or implantation), SiO2 deposit, photoengraving 3 (contact openings), metalising Characterisation (junction depth), photoengraving 4 (metal engraving) Functional tests, unit assembly, electrical tests |